RN49A1 2002-01-16 1 toshiba transistor silicon pnp npn epitaxial type (pct process) (bias resistor built-in transistor) RN49A1 switching, inverter circuit, interface circuit and driver circuit applications. two devices are incorporated into an ultra-super-mini (6 pin) package. incorporating a bias resistor into a transistor reduces parts count. reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. equivalent circuit and bias resistor values q1 q2 q1 r1: 2.2 k , r2: 47 k q2 r1: 22 k , r2: 47 k q1: rn2105f q2: rn1108f marking equivalent circuit (top view) unit: mm jedec D jeita D toshiba 2-2j1a weight: g (typ.) r1 r2 b c e r1 r2 b c e 1 5 4 6 3 1 2 5 6 54 123 q1 q2 4 .com u datasheet
RN49A1 2002-01-16 2 maximum ratings (ta 25c) (q1) characteristics symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 100 ma maximum ratings (ta 25c) (q2) characteristics symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 7 v collector current i c 100 ma maximum ratings (ta 25c) (q1, q2 common) characteristics symbol rating unit collector power dissipation p c (note) 200 mw junction temperature t j 150 c storage temperature range t stg 55~150 c note: total rating 4 .com u datasheet
RN49A1 2002-01-16 3 electrical characteristics (ta 25c) (q1) characteristics symbol test condition min typ. max unit i cbo v cb 50 v, i e 0 100 collector cut-off current i ceo v ce 50 v, i b 0 500 na emitter cut-off current i ebo v eb 5 v, i c 0 0.078 0.145 ma dc current gain h fe v ce 5 v, i c 10 ma 80 collector-emitter saturation voltage v ce (sat) i c 5 ma, i b 0.25 ma 0.1 0.3 v input voltage (on) v i (on) v ce 0.2 v, i c 5 ma 0.6 1.1 v input voltage (off) v i (off) v ce 5 v, i c 0.1 ma 0.5 0.8 v transition frequency f t v ce 10 v, i c 5 ma 200 mhz collector output capacitance c ob v cb 10 v, i e 0, f 1 mhz 3 6 pf input resistor r1 1.54 2.2 2.86 k resistor ratio r1/r2 0.0421 0.0468 0.0515 electrical characteristics (ta 25c) (q2) characteristics symbol test condition min typ. max unit i cbo v cb 50 v, i e 0 100 collector cut-off current i ceo v ce 50 v, i b 0 500 na emitter cut-off current i ebo v eb 7 v, i c 0 0.078 0.145 ma dc current gain h fe v ce 5 v, i c 10 ma 80 collector-emitter saturation voltage v ce (sat) i c 5 ma, i b 0.25 ma 0.1 0.3 v input voltage (on) v i (on) v ce 0.2 v, i c 5 ma 1.0 2.6 v input voltage (off) v i (off) v ce 5 v, i c 0.1 ma 0.6 1.16 v transition frequency f t v ce 10 v, i c 5 ma 250 mhz collector output capacitance c ob v cb 10 v, i e 0, f 1 mhz 3 6 pf input resistor r1 15.4 22 28.6 k resistor ratio r1/r2 0.421 0.468 0.515 4 .com u datasheet
RN49A1 2002-01-16 4 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use 4 .com u datasheet
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